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GigaRad total ionizing dose and post-irradiation effects on 28 nm bulk MOSFETs
The DC performance of both $n$- and $p$MOSFETs fabricated in a commercial-grade 28 nm bulk CMOS process has been studied up to 1 Grad of total ionizing dose and at post-irradiation annealing. The aim is to assess the potential use of such an advanced CMOS technology in the forthcoming upgrade of the...
| Autores principales: | , , , , , , , , |
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| Lenguaje: | eng |
| Publicado: |
2017
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| Materias: | |
| Acceso en línea: | https://dx.doi.org/10.1109/NSSMIC.2016.8069869 http://cds.cern.ch/record/2622271 |