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GigaRad total ionizing dose and post-irradiation effects on 28 nm bulk MOSFETs

The DC performance of both $n$- and $p$MOSFETs fabricated in a commercial-grade 28 nm bulk CMOS process has been studied up to 1 Grad of total ionizing dose and at post-irradiation annealing. The aim is to assess the potential use of such an advanced CMOS technology in the forthcoming upgrade of the...

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Detalles Bibliográficos
Autores principales:	Zhang, C M, Jazaeri, F, Pezzotta, A, Bruschini, C, Borghello, G, Faccio, F, Mattiazzo, S, Baschirotto, A, Enz, C
Lenguaje:	eng
Publicado:	2017
Materias:	Detectors and Experimental Techniques
Acceso en línea:	https://dx.doi.org/10.1109/NSSMIC.2016.8069869 http://cds.cern.ch/record/2622271

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