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Design and Test of a 65nm CMOS Front-End with Zero Dead Time for Next Generation Pixel Detectors

This work is concerned with the experimental characterization of a synchronous analog processor with zero dead time developed in a 65 nm CMOS technology, conceived for pixel detectors at the HL-LHC experiment upgrades. It includes a low noise, fast charge sensitive amplifier with detector leakage co...

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Detalles Bibliográficos
Autores principales: Gaioni, L, Braga, D, Christian, D, Deptuch, G, Fahim , F, Nodari, B, Ratti, L, Re, V, Zimmerman, T
Lenguaje:eng
Publicado: SISSA 2018
Materias:
Acceso en línea:https://dx.doi.org/10.22323/1.313.0021
http://cds.cern.ch/record/2673782