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Total ionizing dose effects on analog performance of 28 nm bulk MOSFETs
This paper uses the simplified charge-based EKV MOSFET model for studying the effects of total ionizing dose (TID) on analog parameters and figures-of-merit (FoMs) of 28nm bulk MOSFETs. These effects are demonstrated to be fully captured by the five key parameters of the simplified EKV model. The la...
| Autores principales: | , , , , , , , |
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| Lenguaje: | eng |
| Publicado: |
2017
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| Materias: | |
| Acceso en línea: | https://dx.doi.org/10.1109/ESSDERC.2017.8066584 http://cds.cern.ch/record/2303656 |