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Total ionizing dose effects on analog performance of 28 nm bulk MOSFETs

This paper uses the simplified charge-based EKV MOSFET model for studying the effects of total ionizing dose (TID) on analog parameters and figures-of-merit (FoMs) of 28nm bulk MOSFETs. These effects are demonstrated to be fully captured by the five key parameters of the simplified EKV model. The la...

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Detalles Bibliográficos
Autores principales:	Zhang, C M, Jazaeri, F, Pezzotta, A, Bruschini, C, Borghello, G, Mattiazzo, S, Baschirotto, A, Enz, C
Lenguaje:	eng
Publicado:	2017
Materias:	Detectors and Experimental Techniques
Acceso en línea:	https://dx.doi.org/10.1109/ESSDERC.2017.8066584 http://cds.cern.ch/record/2303656

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