Characterization of GigaRad Total Ionizing Dose and Annealing Effects on 28-nm Bulk MOSFETs

This paper investigates the radiation tolerance of 28-nm bulk n and pMOSFETs up to 1 Grad of total ionizing dose (TID). The radiation effects on this commercial 28-nm bulk CMOS process demonstrate a strong geometry dependence as a result of the complex interplay of oxide and interface charge trappin...

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Detalles Bibliográficos
Autores principales: Zhang, Chun-Min, Jazaeri, Farzan, Pezzotta, Alessandro, Bruschini, Claudio, Borghello, Giulio, Faccio, Federico, Mattiazzo, Serena, Baschirotto, Andrea, Enz, Christian
Lenguaje:eng
Publicado: 2017
Materias:
Detectors and Experimental Techniques
Acceso en línea:https://dx.doi.org/10.1109/TNS.2017.2746719
http://cds.cern.ch/record/2303217

Internet

https://dx.doi.org/10.1109/TNS.2017.2746719
http://cds.cern.ch/record/2303217

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