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Investigation of voltages and electric fields in silicon radiation detectors using a scanning electron microscope
The paper describes qualitative and quantitative methods to measure voltages and electric fields in a biased silicon p$^+$/n$^−$/n$^+$ radiation detector with a scanning electron microscope using voltage-contrast phenomenon. The contrast is converted to voltage mathematically using simple equations....
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| Lenguaje: | eng |
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2005
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| Acceso en línea: | https://dx.doi.org/10.1016/j.nima.2005.07.075 http://cds.cern.ch/record/2634250 |