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Investigation of voltages and electric fields in silicon radiation detectors using a scanning electron microscope
The paper describes qualitative and quantitative methods to measure voltages and electric fields in a biased silicon p$^+$/n$^−$/n$^+$ radiation detector with a scanning electron microscope using voltage-contrast phenomenon. The contrast is converted to voltage mathematically using simple equations....
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| Lenguaje: | eng |
| Publicado: |
2005
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| Materias: | |
| Acceso en línea: | https://dx.doi.org/10.1016/j.nima.2005.07.075 http://cds.cern.ch/record/2634250 |
| _version_ | 1780959725151584256 |
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| author | Leinonen, Kari |
| author_facet | Leinonen, Kari |
| author_sort | Leinonen, Kari |
| collection | CERN |
| description | The paper describes qualitative and quantitative methods to measure voltages and electric fields in a biased silicon p$^+$/n$^−$/n$^+$ radiation detector with a scanning electron microscope using voltage-contrast phenomenon. The contrast is converted to voltage mathematically using simple equations. After splitting the detector, voltages and electric fields inside the detector can be imaged and measured. The results are compared with capacitance–voltage measurements and 2D electrical simulations. |
| id | oai-inspirehep.net-1655625 |
| institution | Organización Europea para la Investigación Nuclear |
| language | eng |
| publishDate | 2005 |
| record_format | invenio |
| spelling | oai-inspirehep.net-16556252019-09-30T06:29:59Zdoi:10.1016/j.nima.2005.07.075http://cds.cern.ch/record/2634250engLeinonen, KariInvestigation of voltages and electric fields in silicon radiation detectors using a scanning electron microscopeDetectors and Experimental TechniquesDetectors and Experimental TechniquesThe paper describes qualitative and quantitative methods to measure voltages and electric fields in a biased silicon p$^+$/n$^−$/n$^+$ radiation detector with a scanning electron microscope using voltage-contrast phenomenon. The contrast is converted to voltage mathematically using simple equations. After splitting the detector, voltages and electric fields inside the detector can be imaged and measured. The results are compared with capacitance–voltage measurements and 2D electrical simulations.oai:inspirehep.net:16556252005 |
| spellingShingle | Detectors and Experimental Techniques Detectors and Experimental Techniques Leinonen, Kari Investigation of voltages and electric fields in silicon radiation detectors using a scanning electron microscope |
| title | Investigation of voltages and electric fields in silicon radiation detectors using a scanning electron microscope |
| title_full | Investigation of voltages and electric fields in silicon radiation detectors using a scanning electron microscope |
| title_fullStr | Investigation of voltages and electric fields in silicon radiation detectors using a scanning electron microscope |
| title_full_unstemmed | Investigation of voltages and electric fields in silicon radiation detectors using a scanning electron microscope |
| title_short | Investigation of voltages and electric fields in silicon radiation detectors using a scanning electron microscope |
| title_sort | investigation of voltages and electric fields in silicon radiation detectors using a scanning electron microscope |
| topic | Detectors and Experimental Techniques Detectors and Experimental Techniques |
| url | https://dx.doi.org/10.1016/j.nima.2005.07.075 http://cds.cern.ch/record/2634250 |
| work_keys_str_mv | AT leinonenkari investigationofvoltagesandelectricfieldsinsiliconradiationdetectorsusingascanningelectronmicroscope |