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Effect of gamma irradiation on leakage current in CMOS read-out chips for the ATLAS upgrade silicon strip tracker at the HL-LHC
The increase of the leakage current of NMOS transistors in detector readout chips in certain 130 nm CMOS technologies during exposure to ionising radiation needs special consideration in the design of detector systems, as this can result in a large increase of the supply current and power dissipatio...
| Autores principales: | , , , , , , , |
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| Lenguaje: | eng |
| Publicado: |
SISSA
2017
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| Materias: | |
| Acceso en línea: | https://dx.doi.org/10.22323/1.313.0094 http://cds.cern.ch/record/2312291 |