Effect of gamma irradiation on leakage current in CMOS read-out chips for the ATLAS upgrade silicon strip tracker at the HL-LHC

The increase of the leakage current of NMOS transistors in detector readout chips in certain 130 nm CMOS technologies during exposure to ionising radiation needs special consideration in the design of detector systems, as this can result in a large increase of the supply current and power dissipatio...

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Detalles Bibliográficos
Autores principales: Stucci, Stefania Antonia, Burns, Russel, Lynn, Dave, Kierstead, James, Kuczewski, Philip, van Nieuwenhuizen, Gerrit J, Rosin, Guy, Tricoli, Alessandro
Lenguaje:eng
Publicado: SISSA 2017
Materias:
Detectors and Experimental Techniques
Acceso en línea:https://dx.doi.org/10.22323/1.313.0094
http://cds.cern.ch/record/2312291

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