Influence of LDD Spacers and H$^+$ Transport on the Total-Ionizing-Dose Response of 65-nm MOSFETs Irradiated to Ultrahigh Doses

The degradation induced by ultrahigh total ionizing dose in 65-nm MOS transistors is strongly gate-length dependent. The current drive decreases during irradiation, and the threshold voltage often shifts significantly during irradiation and/or high-temperature annealing, depending on transistor pola...

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Detalles Bibliográficos
Autores principales: Faccio, Federico, Borghello, Giulio, Lerario, Edoardo, Fleetwood, Daniel M, Schrimpf, Ronald D, Gong, Huiqi, Zhang, En Xia, Wang, P, Michelis, Stefano, Gerardin, Simone, Paccagnella, Alessandro, Bonaldo, Stefano
Lenguaje:eng
Publicado: 2017
Materias:
Detectors and Experimental Techniques
Acceso en línea:https://dx.doi.org/10.1109/TNS.2017.2760629
http://cds.cern.ch/record/2676298

Internet

https://dx.doi.org/10.1109/TNS.2017.2760629
http://cds.cern.ch/record/2676298

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