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Radiation hardness of amorphous silicon particle sensors
Radiation tests of 32 $\mu \mathrm{m}$ thick hydrogenated amorphous silicon n–i–p diodes have been performed using a high-energy 24 GeV proton beam up to fluences of $2 \times 10^{16}$ protons/cm$^2$. The results are compared to irradiation of similar 1 $\mu \mathrm{m}$ and 32 $\mu \mathrm{m}$ thick...
| Autores principales: | , , , , , , , , |
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| Lenguaje: | eng |
| Publicado: |
2006
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| Materias: | |
| Acceso en línea: | https://dx.doi.org/10.1016/j.jnoncrysol.2005.10.035 http://cds.cern.ch/record/2633498 |