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Second-order generation of point defects in gamma-irradiated float-zone silicon, an explanation for “type inversion”
Radiation-induced defects in silicon diodes were investigated after exposure to high doses of $\rm{Co}^{60}$-gamma irradiation using the thermally stimulated current method. We have found that, for high irradiation doses, a second-order defect can be detected. This defect is largely suppressed in ox...
| Autores principales: | , , , |
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| Lenguaje: | eng |
| Publicado: |
2003
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| Materias: | |
| Acceso en línea: | https://dx.doi.org/10.1063/1.1564869 http://cds.cern.ch/record/2634367 |