Second-order generation of point defects in gamma-irradiated float-zone silicon, an explanation for “type inversion”

Radiation-induced defects in silicon diodes were investigated after exposure to high doses of $\rm{Co}^{60}$-gamma irradiation using the thermally stimulated current method. We have found that, for high irradiation doses, a second-order defect can be detected. This defect is largely suppressed in ox...

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Detalles Bibliográficos
Autores principales: Pintilie, I, Fretwurst, E, Lindström, G, Stahl, J
Lenguaje:eng
Publicado: 2003
Materias:
Detectors and Experimental Techniques
Acceso en línea:https://dx.doi.org/10.1063/1.1564869
http://cds.cern.ch/record/2634367
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author Pintilie, I
Fretwurst, E
Lindström, G
Stahl, J
author_facet Pintilie, I
Fretwurst, E
Lindström, G
Stahl, J
author_sort Pintilie, I
collection CERN
description Radiation-induced defects in silicon diodes were investigated after exposure to high doses of $\rm{Co}^{60}$-gamma irradiation using the thermally stimulated current method. We have found that, for high irradiation doses, a second-order defect can be detected. This defect is largely suppressed in oxygen-enriched material while it is the main cause for the space charge sign inversion effect observed in standard float-zone material.
id oai-inspirehep.net-1685706
institution Organización Europea para la Investigación Nuclear
language eng
publishDate 2003
record_format invenio
spelling oai-inspirehep.net-16857062019-09-30T06:29:59Zdoi:10.1063/1.1564869http://cds.cern.ch/record/2634367engPintilie, IFretwurst, ELindström, GStahl, JSecond-order generation of point defects in gamma-irradiated float-zone silicon, an explanation for “type inversion”Detectors and Experimental TechniquesRadiation-induced defects in silicon diodes were investigated after exposure to high doses of $\rm{Co}^{60}$-gamma irradiation using the thermally stimulated current method. We have found that, for high irradiation doses, a second-order defect can be detected. This defect is largely suppressed in oxygen-enriched material while it is the main cause for the space charge sign inversion effect observed in standard float-zone material.oai:inspirehep.net:16857062003
spellingShingle Detectors and Experimental Techniques
Pintilie, I
Fretwurst, E
Lindström, G
Stahl, J
Second-order generation of point defects in gamma-irradiated float-zone silicon, an explanation for “type inversion”
title Second-order generation of point defects in gamma-irradiated float-zone silicon, an explanation for “type inversion”
title_full Second-order generation of point defects in gamma-irradiated float-zone silicon, an explanation for “type inversion”
title_fullStr Second-order generation of point defects in gamma-irradiated float-zone silicon, an explanation for “type inversion”
title_full_unstemmed Second-order generation of point defects in gamma-irradiated float-zone silicon, an explanation for “type inversion”
title_short Second-order generation of point defects in gamma-irradiated float-zone silicon, an explanation for “type inversion”
title_sort second-order generation of point defects in gamma-irradiated float-zone silicon, an explanation for “type inversion”
topic Detectors and Experimental Techniques
url https://dx.doi.org/10.1063/1.1564869
http://cds.cern.ch/record/2634367
work_keys_str_mv AT pintiliei secondordergenerationofpointdefectsingammairradiatedfloatzonesiliconanexplanationfortypeinversion
AT fretwurste secondordergenerationofpointdefectsingammairradiatedfloatzonesiliconanexplanationfortypeinversion
AT lindstromg secondordergenerationofpointdefectsingammairradiatedfloatzonesiliconanexplanationfortypeinversion
AT stahlj secondordergenerationofpointdefectsingammairradiatedfloatzonesiliconanexplanationfortypeinversion

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