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Second-order generation of point defects in highly irradiated float zone silicon—annealing studies

Isothermal and isochronal annealing experiments have shown that the I defect (the main cause for the changes in silicon diodes characteristics after high levels of gamma-irradiation) is stable up to 325–350°C. Possible reactions, which can explain the behavior of different defects formed during the...

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Detalles Bibliográficos
Autores principales: Pintilie, I, Fretwurst, E, Kramberger, G, Lindstroem, G, Li, Z, Stahl, J
Lenguaje:eng
Publicado: 2003
Materias:
Acceso en línea:https://dx.doi.org/10.1016/j.physb.2003.09.131
http://cds.cern.ch/record/2634251