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Second-order generation of point defects in highly irradiated float zone silicon—annealing studies
Isothermal and isochronal annealing experiments have shown that the I defect (the main cause for the changes in silicon diodes characteristics after high levels of gamma-irradiation) is stable up to 325–350°C. Possible reactions, which can explain the behavior of different defects formed during the...
Autores principales: | , , , , , |
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Lenguaje: | eng |
Publicado: |
2003
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Materias: | |
Acceso en línea: | https://dx.doi.org/10.1016/j.physb.2003.09.131 http://cds.cern.ch/record/2634251 |
Sumario: | Isothermal and isochronal annealing experiments have shown that the I defect (the main cause for the changes in silicon diodes characteristics after high levels of gamma-irradiation) is stable up to 325–350°C. Possible reactions, which can explain the behavior of different defects formed during the annealing experiments, are discussed. All the experimental results concerning the I center (second-order irradiation induced defect, formed most likely via VO center, suppressed in oxygen rich material, high thermal stability) make it the favorite for being associated with the V$_2$O$_2$ complex. |
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