Second-order generation of point defects in highly irradiated float zone silicon—annealing studies

Isothermal and isochronal annealing experiments have shown that the I defect (the main cause for the changes in silicon diodes characteristics after high levels of gamma-irradiation) is stable up to 325–350°C. Possible reactions, which can explain the behavior of different defects formed during the...

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Detalles Bibliográficos
Autores principales: Pintilie, I, Fretwurst, E, Kramberger, G, Lindstroem, G, Li, Z, Stahl, J
Lenguaje:eng
Publicado: 2003
Materias:
Detectors and Experimental Techniques
Acceso en línea:https://dx.doi.org/10.1016/j.physb.2003.09.131
http://cds.cern.ch/record/2634251
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author Pintilie, I
Fretwurst, E
Kramberger, G
Lindstroem, G
Li, Z
Stahl, J
author_facet Pintilie, I
Fretwurst, E
Kramberger, G
Lindstroem, G
Li, Z
Stahl, J
author_sort Pintilie, I
collection CERN
description Isothermal and isochronal annealing experiments have shown that the I defect (the main cause for the changes in silicon diodes characteristics after high levels of gamma-irradiation) is stable up to 325–350°C. Possible reactions, which can explain the behavior of different defects formed during the annealing experiments, are discussed. All the experimental results concerning the I center (second-order irradiation induced defect, formed most likely via VO center, suppressed in oxygen rich material, high thermal stability) make it the favorite for being associated with the V$_2$O$_2$ complex.
id oai-inspirehep.net-1685710
institution Organización Europea para la Investigación Nuclear
language eng
publishDate 2003
record_format invenio
spelling oai-inspirehep.net-16857102019-09-30T06:29:59Zdoi:10.1016/j.physb.2003.09.131http://cds.cern.ch/record/2634251engPintilie, IFretwurst, EKramberger, GLindstroem, GLi, ZStahl, JSecond-order generation of point defects in highly irradiated float zone silicon—annealing studiesDetectors and Experimental TechniquesIsothermal and isochronal annealing experiments have shown that the I defect (the main cause for the changes in silicon diodes characteristics after high levels of gamma-irradiation) is stable up to 325–350°C. Possible reactions, which can explain the behavior of different defects formed during the annealing experiments, are discussed. All the experimental results concerning the I center (second-order irradiation induced defect, formed most likely via VO center, suppressed in oxygen rich material, high thermal stability) make it the favorite for being associated with the V$_2$O$_2$ complex.oai:inspirehep.net:16857102003
spellingShingle Detectors and Experimental Techniques
Pintilie, I
Fretwurst, E
Kramberger, G
Lindstroem, G
Li, Z
Stahl, J
Second-order generation of point defects in highly irradiated float zone silicon—annealing studies
title Second-order generation of point defects in highly irradiated float zone silicon—annealing studies
title_full Second-order generation of point defects in highly irradiated float zone silicon—annealing studies
title_fullStr Second-order generation of point defects in highly irradiated float zone silicon—annealing studies
title_full_unstemmed Second-order generation of point defects in highly irradiated float zone silicon—annealing studies
title_short Second-order generation of point defects in highly irradiated float zone silicon—annealing studies
title_sort second-order generation of point defects in highly irradiated float zone silicon—annealing studies
topic Detectors and Experimental Techniques
url https://dx.doi.org/10.1016/j.physb.2003.09.131
http://cds.cern.ch/record/2634251
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AT fretwurste secondordergenerationofpointdefectsinhighlyirradiatedfloatzonesiliconannealingstudies
AT krambergerg secondordergenerationofpointdefectsinhighlyirradiatedfloatzonesiliconannealingstudies
AT lindstroemg secondordergenerationofpointdefectsinhighlyirradiatedfloatzonesiliconannealingstudies
AT liz secondordergenerationofpointdefectsinhighlyirradiatedfloatzonesiliconannealingstudies
AT stahlj secondordergenerationofpointdefectsinhighlyirradiatedfloatzonesiliconannealingstudies

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