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Second-order generation of point defects in highly irradiated float zone silicon—annealing studies
Isothermal and isochronal annealing experiments have shown that the I defect (the main cause for the changes in silicon diodes characteristics after high levels of gamma-irradiation) is stable up to 325–350°C. Possible reactions, which can explain the behavior of different defects formed during the...
| Autores principales: | , , , , , |
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| Lenguaje: | eng |
| Publicado: |
2003
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| Materias: | |
| Acceso en línea: | https://dx.doi.org/10.1016/j.physb.2003.09.131 http://cds.cern.ch/record/2634251 |