Cargando…

Radiation hardness of silicon—a challenge for defect engineering

Thermally stimulated current measurements of silicon particle detectors have been performed for defect characterization after high levels of $\gamma$- and proton-irradiation. Two defects closely correlated with the detector performance were monitored: a deep acceptor (I) and a bistable donor (BD). I...

Descripción completa

Detalles Bibliográficos
Autores principales: Stahl, J, Fretwurst, E, Lindstroem, G, Pintilie, I
Lenguaje:eng
Publicado: 2003
Materias:
Acceso en línea:https://dx.doi.org/10.1016/j.physb.2003.09.238
http://cds.cern.ch/record/2634252