Radiation hardness of silicon—a challenge for defect engineering

Thermally stimulated current measurements of silicon particle detectors have been performed for defect characterization after high levels of $\gamma$- and proton-irradiation. Two defects closely correlated with the detector performance were monitored: a deep acceptor (I) and a bistable donor (BD). I...

Descripción completa

Detalles Bibliográficos
Autores principales: Stahl, J, Fretwurst, E, Lindstroem, G, Pintilie, I
Lenguaje:eng
Publicado: 2003
Materias:
Detectors and Experimental Techniques
Acceso en línea:https://dx.doi.org/10.1016/j.physb.2003.09.238
http://cds.cern.ch/record/2634252
_version_ 1780959728559456256
author Stahl, J
Fretwurst, E
Lindstroem, G
Pintilie, I
author_facet Stahl, J
Fretwurst, E
Lindstroem, G
Pintilie, I
author_sort Stahl, J
collection CERN
description Thermally stimulated current measurements of silicon particle detectors have been performed for defect characterization after high levels of $\gamma$- and proton-irradiation. Two defects closely correlated with the detector performance were monitored: a deep acceptor (I) and a bistable donor (BD). In oxygen rich silicon the deep acceptor is largely suppressed while the BD generation is strongly enhanced. The influence of the starting material (standard float zone (FZ), oxygen enriched FZ, Cz, epitaxial silicon) on the formation of these two defects is discussed. Identification of the I-defect with the V$_2$O complex, and of BD with the thermal double donor TDD2 is suggested.
id oai-inspirehep.net-1685716
institution Organización Europea para la Investigación Nuclear
language eng
publishDate 2003
record_format invenio
spelling oai-inspirehep.net-16857162019-09-30T06:29:59Zdoi:10.1016/j.physb.2003.09.238http://cds.cern.ch/record/2634252engStahl, JFretwurst, ELindstroem, GPintilie, IRadiation hardness of silicon—a challenge for defect engineeringDetectors and Experimental TechniquesThermally stimulated current measurements of silicon particle detectors have been performed for defect characterization after high levels of $\gamma$- and proton-irradiation. Two defects closely correlated with the detector performance were monitored: a deep acceptor (I) and a bistable donor (BD). In oxygen rich silicon the deep acceptor is largely suppressed while the BD generation is strongly enhanced. The influence of the starting material (standard float zone (FZ), oxygen enriched FZ, Cz, epitaxial silicon) on the formation of these two defects is discussed. Identification of the I-defect with the V$_2$O complex, and of BD with the thermal double donor TDD2 is suggested.oai:inspirehep.net:16857162003
spellingShingle Detectors and Experimental Techniques
Stahl, J
Fretwurst, E
Lindstroem, G
Pintilie, I
Radiation hardness of silicon—a challenge for defect engineering
title Radiation hardness of silicon—a challenge for defect engineering
title_full Radiation hardness of silicon—a challenge for defect engineering
title_fullStr Radiation hardness of silicon—a challenge for defect engineering
title_full_unstemmed Radiation hardness of silicon—a challenge for defect engineering
title_short Radiation hardness of silicon—a challenge for defect engineering
title_sort radiation hardness of silicon—a challenge for defect engineering
topic Detectors and Experimental Techniques
url https://dx.doi.org/10.1016/j.physb.2003.09.238
http://cds.cern.ch/record/2634252
work_keys_str_mv AT stahlj radiationhardnessofsiliconachallengefordefectengineering
AT fretwurste radiationhardnessofsiliconachallengefordefectengineering
AT lindstroemg radiationhardnessofsiliconachallengefordefectengineering
AT pintiliei radiationhardnessofsiliconachallengefordefectengineering

Ejemplares similares