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Radiation hardness of silicon—a challenge for defect engineering
Thermally stimulated current measurements of silicon particle detectors have been performed for defect characterization after high levels of $\gamma$- and proton-irradiation. Two defects closely correlated with the detector performance were monitored: a deep acceptor (I) and a bistable donor (BD). I...
| Autores principales: | , , , |
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| Lenguaje: | eng |
| Publicado: |
2003
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| Materias: | |
| Acceso en línea: | https://dx.doi.org/10.1016/j.physb.2003.09.238 http://cds.cern.ch/record/2634252 |