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Analysis and simulation of charge collection efficiency in silicon thin detectors
Thin detectors have been proposed to investigate the possibility to limit the full depletion voltage and the leakage current of heavily irradiated silicon devices. In this work we compare typical silicon detectors (p–n junctions over a $300 \mu \rm{m }$ thick substrate) with thinned devices ($50–100...
| Autores principales: | , , |
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| Lenguaje: | eng |
| Publicado: |
2005
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| Materias: | |
| Acceso en línea: | https://dx.doi.org/10.1016/j.nima.2005.03.051 http://cds.cern.ch/record/2634253 |