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Some annealing effects in proton irradiated silicon detectors
Annealing studies of a proton irradiated Si test diode (1 MeV-neutron equivalent fluence is $\phi_{eq}=1.82 \times 10^{13} \rm{cm}^{-2}$) were performed. The macroscopic characterization shows that during the annealing experiment the type inversion effect happened. The changes in the microscopic fea...
| Autores principales: | , , , , , |
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| Lenguaje: | eng |
| Publicado: |
2000
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| Materias: | |
| Acceso en línea: | https://dx.doi.org/10.1109/SMICND.2000.890231 http://cds.cern.ch/record/2636329 |