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Some annealing effects in proton irradiated silicon detectors
Annealing studies of a proton irradiated Si test diode (1 MeV-neutron equivalent fluence is $\phi_{eq}=1.82 \times 10^{13} \rm{cm}^{-2}$) were performed. The macroscopic characterization shows that during the annealing experiment the type inversion effect happened. The changes in the microscopic fea...
| Autores principales: | , , , , , |
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| Lenguaje: | eng |
| Publicado: |
2000
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| Materias: | |
| Acceso en línea: | https://dx.doi.org/10.1109/SMICND.2000.890231 http://cds.cern.ch/record/2636329 |
| Sumario: | Annealing studies of a proton irradiated Si test diode (1 MeV-neutron equivalent fluence is $\phi_{eq}=1.82 \times 10^{13} \rm{cm}^{-2}$) were performed. The macroscopic characterization shows that during the annealing experiment the type inversion effect happened. The changes in the microscopic features during the annealing treatment were investigated using Thermally Stimulated Current method. |
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