Some annealing effects in proton irradiated silicon detectors

Annealing studies of a proton irradiated Si test diode (1 MeV-neutron equivalent fluence is $\phi_{eq}=1.82 \times 10^{13} \rm{cm}^{-2}$) were performed. The macroscopic characterization shows that during the annealing experiment the type inversion effect happened. The changes in the microscopic fea...

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Detalles Bibliográficos
Autores principales: Pintilie, I, Petris, M, Tivarus, C, Moll, M, Fretwurst, E, Lindstroem, G
Lenguaje:eng
Publicado: 2000
Materias:
Detectors and Experimental Techniques
Acceso en línea:https://dx.doi.org/10.1109/SMICND.2000.890231
http://cds.cern.ch/record/2636329
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author Pintilie, I
Petris, M
Tivarus, C
Moll, M
Fretwurst, E
Lindstroem, G
author_facet Pintilie, I
Petris, M
Tivarus, C
Moll, M
Fretwurst, E
Lindstroem, G
author_sort Pintilie, I
collection CERN
description Annealing studies of a proton irradiated Si test diode (1 MeV-neutron equivalent fluence is $\phi_{eq}=1.82 \times 10^{13} \rm{cm}^{-2}$) were performed. The macroscopic characterization shows that during the annealing experiment the type inversion effect happened. The changes in the microscopic features during the annealing treatment were investigated using Thermally Stimulated Current method.
id oai-inspirehep.net-1689093
institution Organización Europea para la Investigación Nuclear
language eng
publishDate 2000
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spelling oai-inspirehep.net-16890932019-09-30T06:29:59Zdoi:10.1109/SMICND.2000.890231http://cds.cern.ch/record/2636329engPintilie, IPetris, MTivarus, CMoll, MFretwurst, ELindstroem, GSome annealing effects in proton irradiated silicon detectorsDetectors and Experimental TechniquesAnnealing studies of a proton irradiated Si test diode (1 MeV-neutron equivalent fluence is $\phi_{eq}=1.82 \times 10^{13} \rm{cm}^{-2}$) were performed. The macroscopic characterization shows that during the annealing experiment the type inversion effect happened. The changes in the microscopic features during the annealing treatment were investigated using Thermally Stimulated Current method.oai:inspirehep.net:16890932000
spellingShingle Detectors and Experimental Techniques
Pintilie, I
Petris, M
Tivarus, C
Moll, M
Fretwurst, E
Lindstroem, G
Some annealing effects in proton irradiated silicon detectors
title Some annealing effects in proton irradiated silicon detectors
title_full Some annealing effects in proton irradiated silicon detectors
title_fullStr Some annealing effects in proton irradiated silicon detectors
title_full_unstemmed Some annealing effects in proton irradiated silicon detectors
title_short Some annealing effects in proton irradiated silicon detectors
title_sort some annealing effects in proton irradiated silicon detectors
topic Detectors and Experimental Techniques
url https://dx.doi.org/10.1109/SMICND.2000.890231
http://cds.cern.ch/record/2636329
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AT petrism someannealingeffectsinprotonirradiatedsilicondetectors
AT tivarusc someannealingeffectsinprotonirradiatedsilicondetectors
AT mollm someannealingeffectsinprotonirradiatedsilicondetectors
AT fretwurste someannealingeffectsinprotonirradiatedsilicondetectors
AT lindstroemg someannealingeffectsinprotonirradiatedsilicondetectors

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