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Reactions of interstitial carbon with impurities in silicon particle detectors
We present deep level transient spectroscopy (DLTS) data measured on very high resistivity $n$-type float-zone silicon detectors after irradiation with 6 MeV electrons. The carbon interstitial annealing kinetics is investigated as a function of depth in the detector structure and related to the inho...
Autores principales: | , , , |
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Lenguaje: | eng |
Publicado: |
2007
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Materias: | |
Acceso en línea: | https://dx.doi.org/10.1063/1.2745328 http://cds.cern.ch/record/2635824 |