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Reactions of interstitial carbon with impurities in silicon particle detectors

We present deep level transient spectroscopy (DLTS) data measured on very high resistivity $n$-type float-zone silicon detectors after irradiation with 6 MeV electrons. The carbon interstitial annealing kinetics is investigated as a function of depth in the detector structure and related to the inho...

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Detalles Bibliográficos
Autores principales: Makarenko, L F, Moll, M, Korshunov, F P, Lastovski, S B
Lenguaje:eng
Publicado: 2007
Materias:
Acceso en línea:https://dx.doi.org/10.1063/1.2745328
http://cds.cern.ch/record/2635824