Cargando…
Reactions of interstitial carbon with impurities in silicon particle detectors
We present deep level transient spectroscopy (DLTS) data measured on very high resistivity $n$-type float-zone silicon detectors after irradiation with 6 MeV electrons. The carbon interstitial annealing kinetics is investigated as a function of depth in the detector structure and related to the inho...
| Autores principales: | , , , |
|---|---|
| Lenguaje: | eng |
| Publicado: |
2007
|
| Materias: | |
| Acceso en línea: | https://dx.doi.org/10.1063/1.2745328 http://cds.cern.ch/record/2635824 |