Dose-Rate Sensitivity of 65-nm MOSFETs Exposed to Ultrahigh Doses

The radiation response of complementary metal- oxide-semiconductor (CMOS) gate oxides is typically insensitive to true dose-rate effects, but damage in deep-sub-micrometer technologies is dominated by ionization mechanisms in thick isolation oxides surrounding the transistors. Recent results in 65-n...

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Detalles Bibliográficos
Autores principales: Borghello, Giulio, Faccio, Federico, Lerario, Edoardo, Michelis, Stefano, Kulis, Szymon, Fleetwood, Daniel M, Schrimpf, Ronald D, Gerardin, Simone, Paccagnella, Alessandro, Bonaldo, Stefano
Lenguaje:eng
Publicado: 2018
Materias:
Detectors and Experimental Techniques
Acceso en línea:https://dx.doi.org/10.1109/TNS.2018.2828142
http://cds.cern.ch/record/2644821

Internet

https://dx.doi.org/10.1109/TNS.2018.2828142
http://cds.cern.ch/record/2644821

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