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Dose-Rate Sensitivity of 65-nm MOSFETs Exposed to Ultrahigh Doses
The radiation response of complementary metal- oxide-semiconductor (CMOS) gate oxides is typically insensitive to true dose-rate effects, but damage in deep-sub-micrometer technologies is dominated by ionization mechanisms in thick isolation oxides surrounding the transistors. Recent results in 65-n...
Autores principales: | , , , , , , , , , |
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Lenguaje: | eng |
Publicado: |
2018
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Materias: | |
Acceso en línea: | https://dx.doi.org/10.1109/TNS.2018.2828142 http://cds.cern.ch/record/2644821 |
_version_ | 1780960474965213184 |
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author | Borghello, Giulio Faccio, Federico Lerario, Edoardo Michelis, Stefano Kulis, Szymon Fleetwood, Daniel M Schrimpf, Ronald D Gerardin, Simone Paccagnella, Alessandro Bonaldo, Stefano |
author_facet | Borghello, Giulio Faccio, Federico Lerario, Edoardo Michelis, Stefano Kulis, Szymon Fleetwood, Daniel M Schrimpf, Ronald D Gerardin, Simone Paccagnella, Alessandro Bonaldo, Stefano |
author_sort | Borghello, Giulio |
collection | CERN |
description | The radiation response of complementary metal- oxide-semiconductor (CMOS) gate oxides is typically insensitive to true dose-rate effects, but damage in deep-sub-micrometer technologies is dominated by ionization mechanisms in thick isolation oxides surrounding the transistors. Recent results in 65-nm FETs demonstrated that performance degradation in ultrahigh total ionizing dose (TID) experiments is due to defects in the isolation shallow trench isolation oxide or in the materials composing the lightly doped drain spacers. These insulators are thick, deposited, and crossed by a low electric field, characteristics similar to those typical of passivation oxides in linear bipolar technologies for which an enhanced low-doserate sensitivity (ELDRS) has been observed and systematically studied. We report in this paper the clear evidence of a dose-rate sensitivity of the TID-induced damage in both 130 and 65-nm CMOS technologies exposed to different radiation sources (X-rays and $\gamma$-rays from a $^{60}$Co source). This sensitivity is attributed to mechanisms similar to those explaining ELDRS in bipolar devices and represents a significant challenge to the definition of a qualification procedure for circuits to be used in extreme radiation environments. |
id | oai-inspirehep.net-1698372 |
institution | Organización Europea para la Investigación Nuclear |
language | eng |
publishDate | 2018 |
record_format | invenio |
spelling | oai-inspirehep.net-16983722019-09-30T06:29:59Zdoi:10.1109/TNS.2018.2828142http://cds.cern.ch/record/2644821engBorghello, GiulioFaccio, FedericoLerario, EdoardoMichelis, StefanoKulis, SzymonFleetwood, Daniel MSchrimpf, Ronald DGerardin, SimonePaccagnella, AlessandroBonaldo, StefanoDose-Rate Sensitivity of 65-nm MOSFETs Exposed to Ultrahigh DosesDetectors and Experimental TechniquesThe radiation response of complementary metal- oxide-semiconductor (CMOS) gate oxides is typically insensitive to true dose-rate effects, but damage in deep-sub-micrometer technologies is dominated by ionization mechanisms in thick isolation oxides surrounding the transistors. Recent results in 65-nm FETs demonstrated that performance degradation in ultrahigh total ionizing dose (TID) experiments is due to defects in the isolation shallow trench isolation oxide or in the materials composing the lightly doped drain spacers. These insulators are thick, deposited, and crossed by a low electric field, characteristics similar to those typical of passivation oxides in linear bipolar technologies for which an enhanced low-doserate sensitivity (ELDRS) has been observed and systematically studied. We report in this paper the clear evidence of a dose-rate sensitivity of the TID-induced damage in both 130 and 65-nm CMOS technologies exposed to different radiation sources (X-rays and $\gamma$-rays from a $^{60}$Co source). This sensitivity is attributed to mechanisms similar to those explaining ELDRS in bipolar devices and represents a significant challenge to the definition of a qualification procedure for circuits to be used in extreme radiation environments.oai:inspirehep.net:16983722018 |
spellingShingle | Detectors and Experimental Techniques Borghello, Giulio Faccio, Federico Lerario, Edoardo Michelis, Stefano Kulis, Szymon Fleetwood, Daniel M Schrimpf, Ronald D Gerardin, Simone Paccagnella, Alessandro Bonaldo, Stefano Dose-Rate Sensitivity of 65-nm MOSFETs Exposed to Ultrahigh Doses |
title | Dose-Rate Sensitivity of 65-nm MOSFETs Exposed to Ultrahigh Doses |
title_full | Dose-Rate Sensitivity of 65-nm MOSFETs Exposed to Ultrahigh Doses |
title_fullStr | Dose-Rate Sensitivity of 65-nm MOSFETs Exposed to Ultrahigh Doses |
title_full_unstemmed | Dose-Rate Sensitivity of 65-nm MOSFETs Exposed to Ultrahigh Doses |
title_short | Dose-Rate Sensitivity of 65-nm MOSFETs Exposed to Ultrahigh Doses |
title_sort | dose-rate sensitivity of 65-nm mosfets exposed to ultrahigh doses |
topic | Detectors and Experimental Techniques |
url | https://dx.doi.org/10.1109/TNS.2018.2828142 http://cds.cern.ch/record/2644821 |
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