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Lab and test beam results of irradiated silicon sensors with modified ATLAS pixel implantations
In Dortmund, planar silicon pixel sensors were designed with modified n+-implantations and produced in n+-in-n sensor technology. Baseline for these new designs was the layout of the IBL planar silicon pixel sensor with a 250 μm × 50 μm pitch. The different implantation shapes are intended to cause...
| Autores principales: | , , , , , , , , , , |
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| Lenguaje: | eng |
| Publicado: |
2018
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| Materias: | |
| Acceso en línea: | https://dx.doi.org/10.1088/1748-0221/13/11/C11004 http://cds.cern.ch/record/2681176 |