Mechanisms of Electron-Induced Single-Event Latchup

In this paper, possible mechanisms by which electrons can induce single-event latchups in electronics are discussed. The energy deposition and the nuclear fragments created by electrons in silicon are analyzed in this context. The cross section enhancement effect in the presence of high-Z materials...

Descripción completa

Detalles Bibliográficos
Autores principales: Tali, Maris, Alia, Ruben García, Brugger, Markus, Ferlet-Cavrois, Véronique, Corsini, Roberto, Farabolini, Wilfrid, Javanainen, Arto, Santin, Giovanni, Boatella Polo, Cesar, Virtanen, Ari
Lenguaje:eng
Publicado: 2018
Materias:
Detectors and Experimental Techniques
Acceso en línea:https://dx.doi.org/10.1109/TNS.2018.2884537
http://cds.cern.ch/record/2669514

Internet

https://dx.doi.org/10.1109/TNS.2018.2884537
http://cds.cern.ch/record/2669514

Ejemplares similares