Mechanisms of Electron-Induced Single-Event Latchup

In this paper, possible mechanisms by which electrons can induce single-event latchups in electronics are discussed. The energy deposition and the nuclear fragments created by electrons in silicon are analyzed in this context. The cross section enhancement effect in the presence of high-Z materials...

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Detalles Bibliográficos
Autores principales: Tali, Maris, Alia, Ruben García, Brugger, Markus, Ferlet-Cavrois, Véronique, Corsini, Roberto, Farabolini, Wilfrid, Javanainen, Arto, Santin, Giovanni, Boatella Polo, Cesar, Virtanen, Ari
Lenguaje:eng
Publicado: 2018
Materias:
Detectors and Experimental Techniques
Acceso en línea:https://dx.doi.org/10.1109/TNS.2018.2884537
http://cds.cern.ch/record/2669514
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author Tali, Maris
Alia, Ruben García
Brugger, Markus
Ferlet-Cavrois, Véronique
Corsini, Roberto
Farabolini, Wilfrid
Javanainen, Arto
Santin, Giovanni
Boatella Polo, Cesar
Virtanen, Ari
author_facet Tali, Maris
Alia, Ruben García
Brugger, Markus
Ferlet-Cavrois, Véronique
Corsini, Roberto
Farabolini, Wilfrid
Javanainen, Arto
Santin, Giovanni
Boatella Polo, Cesar
Virtanen, Ari
author_sort Tali, Maris
collection CERN
description In this paper, possible mechanisms by which electrons can induce single-event latchups in electronics are discussed. The energy deposition and the nuclear fragments created by electrons in silicon are analyzed in this context. The cross section enhancement effect in the presence of high-Z materials is discussed. First experimental results of electron-induced latchups are shown in static random access memory devices with low linear energy transfer thresholds. The radiation hardness assurance implications and future work are discussed.
id oai-inspirehep.net-1727119
institution Organización Europea para la Investigación Nuclear
language eng
publishDate 2018
record_format invenio
spelling oai-inspirehep.net-17271192022-08-10T12:30:06Zdoi:10.1109/TNS.2018.2884537http://cds.cern.ch/record/2669514engTali, MarisAlia, Ruben GarcíaBrugger, MarkusFerlet-Cavrois, VéroniqueCorsini, RobertoFarabolini, WilfridJavanainen, ArtoSantin, GiovanniBoatella Polo, CesarVirtanen, AriMechanisms of Electron-Induced Single-Event LatchupDetectors and Experimental TechniquesIn this paper, possible mechanisms by which electrons can induce single-event latchups in electronics are discussed. The energy deposition and the nuclear fragments created by electrons in silicon are analyzed in this context. The cross section enhancement effect in the presence of high-Z materials is discussed. First experimental results of electron-induced latchups are shown in static random access memory devices with low linear energy transfer thresholds. The radiation hardness assurance implications and future work are discussed.oai:inspirehep.net:17271192018
spellingShingle Detectors and Experimental Techniques
Tali, Maris
Alia, Ruben García
Brugger, Markus
Ferlet-Cavrois, Véronique
Corsini, Roberto
Farabolini, Wilfrid
Javanainen, Arto
Santin, Giovanni
Boatella Polo, Cesar
Virtanen, Ari
Mechanisms of Electron-Induced Single-Event Latchup
title Mechanisms of Electron-Induced Single-Event Latchup
title_full Mechanisms of Electron-Induced Single-Event Latchup
title_fullStr Mechanisms of Electron-Induced Single-Event Latchup
title_full_unstemmed Mechanisms of Electron-Induced Single-Event Latchup
title_short Mechanisms of Electron-Induced Single-Event Latchup
title_sort mechanisms of electron-induced single-event latchup
topic Detectors and Experimental Techniques
url https://dx.doi.org/10.1109/TNS.2018.2884537
http://cds.cern.ch/record/2669514
work_keys_str_mv AT talimaris mechanismsofelectroninducedsingleeventlatchup
AT aliarubengarcia mechanismsofelectroninducedsingleeventlatchup
AT bruggermarkus mechanismsofelectroninducedsingleeventlatchup
AT ferletcavroisveronique mechanismsofelectroninducedsingleeventlatchup
AT corsiniroberto mechanismsofelectroninducedsingleeventlatchup
AT faraboliniwilfrid mechanismsofelectroninducedsingleeventlatchup
AT javanainenarto mechanismsofelectroninducedsingleeventlatchup
AT santingiovanni mechanismsofelectroninducedsingleeventlatchup
AT boatellapolocesar mechanismsofelectroninducedsingleeventlatchup
AT virtanenari mechanismsofelectroninducedsingleeventlatchup

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