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Mechanisms of Electron-Induced Single-Event Latchup
In this paper, possible mechanisms by which electrons can induce single-event latchups in electronics are discussed. The energy deposition and the nuclear fragments created by electrons in silicon are analyzed in this context. The cross section enhancement effect in the presence of high-Z materials...
| Autores principales: | , , , , , , , , , |
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| Lenguaje: | eng |
| Publicado: |
2018
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| Materias: | |
| Acceso en línea: | https://dx.doi.org/10.1109/TNS.2018.2884537 http://cds.cern.ch/record/2669514 |