Radiation damage in p-type EPI silicon pad diodes irradiated with protons and neutrons

In view of the HL-LHC upgrade, radiation-tolerant silicon sensors containing low-resistivity p-type implants or substrates, like LGAD or HV-CMOS devices, are being developed in the framework of ATLAS, CMS, RD50 and other sensor R&D; projects. These devices are facing a particular problem - the a...

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Detalles Bibliográficos
Autores principales: Gurimskaya, Yana, Dias De Almeida, Pedro, Fernandez Garcia, Marcos, Mateu Suau, Isidre, Moll, Michael, Fretwurst, Eckhart, Makarenko, Leonid, Pintilie, Ioana
Lenguaje:eng
Publicado: Elsevier 2020
Materias:
Detectors and Experimental Techniques
Acceso en línea:https://dx.doi.org/10.1016/j.nima.2019.05.062
http://cds.cern.ch/record/2725196

Internet

https://dx.doi.org/10.1016/j.nima.2019.05.062
http://cds.cern.ch/record/2725196

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