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Current Transport Mechanism for Heavy-Ion Degraded SiC MOSFETs
High sensitivity of silicon-carbide (SiC) power MOSFETs has been observed under heavy-ion irradiation, leading to permanent increase of drain and gate leakage currents. The electrical postirradiation analysis confirmed the degradation of the gate oxide and the blocking capability of the devices. At...
| Autores principales: | , , , , , , |
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| Lenguaje: | eng |
| Publicado: |
2019
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| Materias: | |
| Acceso en línea: | https://dx.doi.org/10.1109/TNS.2019.2907669 http://cds.cern.ch/record/2757335 |