Current Transport Mechanism for Heavy-Ion Degraded SiC MOSFETs

High sensitivity of silicon-carbide (SiC) power MOSFETs has been observed under heavy-ion irradiation, leading to permanent increase of drain and gate leakage currents. The electrical postirradiation analysis confirmed the degradation of the gate oxide and the blocking capability of the devices. At...

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Detalles Bibliográficos
Autores principales: Martinella, C, Stark, R, Ziemann, T, Alia, R G, Kadi, Y, Grossner, U, Javanainen, A
Lenguaje:eng
Publicado: 2019
Materias:
Detectors and Experimental Techniques
Acceso en línea:https://dx.doi.org/10.1109/TNS.2019.2907669
http://cds.cern.ch/record/2757335
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author Martinella, C
Stark, R
Ziemann, T
Alia, R G
Kadi, Y
Grossner, U
Javanainen, A
author_facet Martinella, C
Stark, R
Ziemann, T
Alia, R G
Kadi, Y
Grossner, U
Javanainen, A
author_sort Martinella, C
collection CERN
description High sensitivity of silicon-carbide (SiC) power MOSFETs has been observed under heavy-ion irradiation, leading to permanent increase of drain and gate leakage currents. The electrical postirradiation analysis confirmed the degradation of the gate oxide and the blocking capability of the devices. At low drain bias, the leakage path is formed between drain and gate, while at higher bias the heavy-ion-induced leakage path is mostly from drain to source. An electrical model is proposed to explain the current transport mechanism for heavy-ion degraded SiC power MOSFETs.
id oai-inspirehep.net-1750224
institution Organización Europea para la Investigación Nuclear
language eng
publishDate 2019
record_format invenio
spelling oai-inspirehep.net-17502242021-03-19T22:31:31Zdoi:10.1109/TNS.2019.2907669http://cds.cern.ch/record/2757335engMartinella, CStark, RZiemann, TAlia, R GKadi, YGrossner, UJavanainen, ACurrent Transport Mechanism for Heavy-Ion Degraded SiC MOSFETsDetectors and Experimental TechniquesHigh sensitivity of silicon-carbide (SiC) power MOSFETs has been observed under heavy-ion irradiation, leading to permanent increase of drain and gate leakage currents. The electrical postirradiation analysis confirmed the degradation of the gate oxide and the blocking capability of the devices. At low drain bias, the leakage path is formed between drain and gate, while at higher bias the heavy-ion-induced leakage path is mostly from drain to source. An electrical model is proposed to explain the current transport mechanism for heavy-ion degraded SiC power MOSFETs.oai:inspirehep.net:17502242019
spellingShingle Detectors and Experimental Techniques
Martinella, C
Stark, R
Ziemann, T
Alia, R G
Kadi, Y
Grossner, U
Javanainen, A
Current Transport Mechanism for Heavy-Ion Degraded SiC MOSFETs
title Current Transport Mechanism for Heavy-Ion Degraded SiC MOSFETs
title_full Current Transport Mechanism for Heavy-Ion Degraded SiC MOSFETs
title_fullStr Current Transport Mechanism for Heavy-Ion Degraded SiC MOSFETs
title_full_unstemmed Current Transport Mechanism for Heavy-Ion Degraded SiC MOSFETs
title_short Current Transport Mechanism for Heavy-Ion Degraded SiC MOSFETs
title_sort current transport mechanism for heavy-ion degraded sic mosfets
topic Detectors and Experimental Techniques
url https://dx.doi.org/10.1109/TNS.2019.2907669
http://cds.cern.ch/record/2757335
work_keys_str_mv AT martinellac currenttransportmechanismforheavyiondegradedsicmosfets
AT starkr currenttransportmechanismforheavyiondegradedsicmosfets
AT ziemannt currenttransportmechanismforheavyiondegradedsicmosfets
AT aliarg currenttransportmechanismforheavyiondegradedsicmosfets
AT kadiy currenttransportmechanismforheavyiondegradedsicmosfets
AT grossneru currenttransportmechanismforheavyiondegradedsicmosfets
AT javanainena currenttransportmechanismforheavyiondegradedsicmosfets

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