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Forward and Reverse Operation of Enclosed-Gate MOSFETs and Sensitivity to High Total Ionizing Dose
Frond-end electronics at the High Luminosity-Large Hadron Collider (HL-LHC) at CERN, will be exposed to ten-fold radiation doses. The use of enclosed gate (EG) MOSFETs of 65 nm Bulk CMOS process, is considered to be a viable solution in order to suppress performance degradation effects that occur af...
| Autores principales: | , , , , , , |
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| Lenguaje: | eng |
| Publicado: |
IEEE
2019
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| Materias: | |
| Acceso en línea: | https://dx.doi.org/10.23919/MIXDES.2019.8787098 http://cds.cern.ch/record/2729051 |