Forward and Reverse Operation of Enclosed-Gate MOSFETs and Sensitivity to High Total Ionizing Dose

Frond-end electronics at the High Luminosity-Large Hadron Collider (HL-LHC) at CERN, will be exposed to ten-fold radiation doses. The use of enclosed gate (EG) MOSFETs of 65 nm Bulk CMOS process, is considered to be a viable solution in order to suppress performance degradation effects that occur af...

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Detalles Bibliográficos
Autores principales: Nikolaou, Aristeidis, Chevas, Loukas, Papadopoulou, Alexia, Makris, Nikolaos, Bucher, Matthias, Borghello, Giulio, Faccio, Federico
Lenguaje:eng
Publicado: IEEE 2019
Materias:
Detectors and Experimental Techniques
Acceso en línea:https://dx.doi.org/10.23919/MIXDES.2019.8787098
http://cds.cern.ch/record/2729051
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author Nikolaou, Aristeidis
Chevas, Loukas
Papadopoulou, Alexia
Makris, Nikolaos
Bucher, Matthias
Borghello, Giulio
Faccio, Federico
author_facet Nikolaou, Aristeidis
Chevas, Loukas
Papadopoulou, Alexia
Makris, Nikolaos
Bucher, Matthias
Borghello, Giulio
Faccio, Federico
author_sort Nikolaou, Aristeidis
collection CERN
description Frond-end electronics at the High Luminosity-Large Hadron Collider (HL-LHC) at CERN, will be exposed to ten-fold radiation doses. The use of enclosed gate (EG) MOSFETs of 65 nm Bulk CMOS process, is considered to be a viable solution in order to suppress performance degradation effects that occur after high TID exposure. The present paper presents a detailed analysis of the functionality of EG MOSFETs operating under high TID, taking into accountspecific layout characteristics.
id oai-inspirehep.net-1767027
institution Organización Europea para la Investigación Nuclear
language eng
publishDate 2019
publisher IEEE
record_format invenio
spelling oai-inspirehep.net-17670272022-08-17T12:59:21Zdoi:10.23919/MIXDES.2019.8787098http://cds.cern.ch/record/2729051engNikolaou, AristeidisChevas, LoukasPapadopoulou, AlexiaMakris, NikolaosBucher, MatthiasBorghello, GiulioFaccio, FedericoForward and Reverse Operation of Enclosed-Gate MOSFETs and Sensitivity to High Total Ionizing DoseDetectors and Experimental TechniquesFrond-end electronics at the High Luminosity-Large Hadron Collider (HL-LHC) at CERN, will be exposed to ten-fold radiation doses. The use of enclosed gate (EG) MOSFETs of 65 nm Bulk CMOS process, is considered to be a viable solution in order to suppress performance degradation effects that occur after high TID exposure. The present paper presents a detailed analysis of the functionality of EG MOSFETs operating under high TID, taking into accountspecific layout characteristics.IEEEoai:inspirehep.net:17670272019
spellingShingle Detectors and Experimental Techniques
Nikolaou, Aristeidis
Chevas, Loukas
Papadopoulou, Alexia
Makris, Nikolaos
Bucher, Matthias
Borghello, Giulio
Faccio, Federico
Forward and Reverse Operation of Enclosed-Gate MOSFETs and Sensitivity to High Total Ionizing Dose
title Forward and Reverse Operation of Enclosed-Gate MOSFETs and Sensitivity to High Total Ionizing Dose
title_full Forward and Reverse Operation of Enclosed-Gate MOSFETs and Sensitivity to High Total Ionizing Dose
title_fullStr Forward and Reverse Operation of Enclosed-Gate MOSFETs and Sensitivity to High Total Ionizing Dose
title_full_unstemmed Forward and Reverse Operation of Enclosed-Gate MOSFETs and Sensitivity to High Total Ionizing Dose
title_short Forward and Reverse Operation of Enclosed-Gate MOSFETs and Sensitivity to High Total Ionizing Dose
title_sort forward and reverse operation of enclosed-gate mosfets and sensitivity to high total ionizing dose
topic Detectors and Experimental Techniques
url https://dx.doi.org/10.23919/MIXDES.2019.8787098
http://cds.cern.ch/record/2729051
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AT chevasloukas forwardandreverseoperationofenclosedgatemosfetsandsensitivitytohightotalionizingdose
AT papadopouloualexia forwardandreverseoperationofenclosedgatemosfetsandsensitivitytohightotalionizingdose
AT makrisnikolaos forwardandreverseoperationofenclosedgatemosfetsandsensitivitytohightotalionizingdose
AT buchermatthias forwardandreverseoperationofenclosedgatemosfetsandsensitivitytohightotalionizingdose
AT borghellogiulio forwardandreverseoperationofenclosedgatemosfetsandsensitivitytohightotalionizingdose
AT facciofederico forwardandreverseoperationofenclosedgatemosfetsandsensitivitytohightotalionizingdose

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