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Impact of TCAD model parameters on optical and electrical characteristics of radiation-hard photodiode in 0.35 $\mu$m CMOS technology
In this paper, a variability Design of Experiment (DoE) is performed on a radiation-hard photodiode structure in order to understand how the physical parameters of the device impact its spectral responsivity and dark current. The varied physical parameters describe the carrier mobility, lifetime, en...
| Autores principales: | , , , , |
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| Lenguaje: | eng |
| Publicado: |
2018
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| Materias: | |
| Acceso en línea: | https://dx.doi.org/10.23919/mipro.2018.8400003 http://cds.cern.ch/record/2713624 |