Cargando…

Impact of TCAD model parameters on optical and electrical characteristics of radiation-hard photodiode in 0.35 $\mu$m CMOS technology

In this paper, a variability Design of Experiment (DoE) is performed on a radiation-hard photodiode structure in order to understand how the physical parameters of the device impact its spectral responsivity and dark current. The varied physical parameters describe the carrier mobility, lifetime, en...

Descripción completa

Detalles Bibliográficos
Autores principales:	Segmanovic, Filip, Roger, Frederic, Meinhardt, Gerald, Jonak-Auer, Ingrid, Suligoj, Tomislav
Lenguaje:	eng
Publicado:	2018
Materias:	Detectors and Experimental Techniques
Acceso en línea:	https://dx.doi.org/10.23919/mipro.2018.8400003 http://cds.cern.ch/record/2713624

Ejemplares similares

Optical and Electrical Simulations of Radiation-Hard Photodiode in 0.35μM High-Voltage CMOS Technology
por: Segmanovic, Filip, et al.
Publicado: (2018)

Area and Bandwidth Enhancement of an n(+)/p-Well Dot Avalanche Photodiode in 0.35 μm CMOS Technology
por: Kohneh Poushi, Seyed Saman, et al.
Publicado: (2023)

Design, Characterization and Analysis of a 0.35 μm CMOS SPAD
por: Jradi, Khalil, et al.
Publicado: (2014)

Avalanche Transients of Thick 0.35 µm CMOS Single-Photon Avalanche Diodes
por: Goll, Bernhard, et al.
Publicado: (2020)

Simulation tutorial on HV/HR-CMOS TCAD and Geant4 simulations
por: Casse, Gianluigi, et al.
Publicado: (2017)

Simulation workshop on HV/HR-CMOS TCAD and Geant4 simulations
por: Casse, G., et al.
Publicado: (2016)

A 0.35-μm CMOS-MEMS Oscillator for High-Resolution Distributed Mass Detection
por: Perelló-Roig, Rafel, et al.
Publicado: (2018)

TCAD-Based Analysis of Radiation-Hardness in Silicon Detectors
por: Passeri, D, et al.
Publicado: (1998)

TCAD simulations of High-Voltage-CMOS Pixel structures for the CLIC vertex detector
por: Buckland, Matthew Daniel
Publicado: (2016)

Short range electromagnetic interface using 0.35 μm CMOS blocks for temperature monitoring in isolated areas
por: Sotner, Roman, et al.
Publicado: (2022)

A New Configurable Wireless Sensor System for Biomedical Applications with ISO 18000-3 Interface in 0.35 µm CMOS †
por: Fedtschenko, Tatjana, et al.
Publicado: (2019)

A 1$\mu$W Radiation-Hard Front-End in a 0.18-$\mu$m CMOS Process for the MALTA2 Monolithic Sensor
por: Piro, F, et al.
Publicado: (2022)

TCAD Librairies
por: Pangaud, P
Publicado: (2018)

Indirect Time-of-Flight with GHz Correlation Frequency and Integrated SPAD Reaching Sub-100 µm Precision in 0.35 µm CMOS
por: Hauser, Michael, et al.
Publicado: (2023)

Ultraviolet Response in Coplanar Silicon Avalanche Photodiodes with CMOS Compatibility
por: Liu, Qiaoli, et al.
Publicado: (2022)

Radiation susceptivity of a non-rad-hard 1.2 $\mu$m CMOS
por: Matsushita, T, et al.
Publicado: (1994)

Radiation hard avalanche photodiodes for CMS ECAL
por: Kuznetsov, A, et al.
Publicado: (2003)

Radiation hard avalanche photodiodes for the CMS detector
por: Antunovic, Z, et al.
Publicado: (2005)

Technical design and concept of a 0.35 T MR-Linac
por: Klüter, Sebastian
Publicado: (2019)

Multiband Imaging CMOS Image Sensor with Multi-Storied Photodiode Structure †
por: Takemoto, Yoshiaki, et al.
Publicado: (2018)

Combining TCAD and Monte Carlo Methods to Simulate High-Resistivity CMOS Pixel Detectors using the Allpix2 Framework
por: Dort, Katharina
Publicado: (2018)

Radiation Hardness of MALTA2 Monolithic CMOS Sensors on Czochralski Substrates
por: van Rijnbach, Milou, et al.
Publicado: (2023)

TCAD radiation damage model
por: Passeri, D, et al.
Publicado: (2020)

Validation and release of TCAD software
por: A. Macchiolo, et al.
Publicado: (2016)

Geiger-Mode Avalanche Photodiode Arrays Integrated to All-Digital CMOS Circuits
por: Aull, Brian
Publicado: (2016)

A 45 nm CMOS Avalanche Photodiode with 8.4-GHz Bandwidth
por: Zhi, Wenhao, et al.
Publicado: (2020)

Hybrid image sensor of small molecule organic photodiode on CMOS – Integration and characterization
por: Shekhar, Himanshu, et al.
Publicado: (2020)

High Statistics Testing of Radiation Hardness and Reliability of Lasers and Photodiodes
por: Gill, K, et al.
Publicado: (2004)

Radiation damage modeling: TCAD simulation
por: Jain, Geetika
Publicado: (2019)

Combining TCAD and Monte Carlo Methods to Simulate CMOS Pixel Sensors with a Small Collection Electrode using the Allpix$^2$ Framework
por: Dannheim, Dominik, et al.
Publicado: (2019)

Direct tumor visual feedback during free breathing in 0.35T MRgRT
por: Kim, Taeho, et al.
Publicado: (2020)

Clinical assessment of geometric distortion for a 0.35T MR‐guided radiotherapy system
por: Neylon, John, et al.
Publicado: (2021)

Commissioning a secondary dose calculation software for a 0.35 T MR‐linac
por: Price, Alex T., et al.
Publicado: (2022)

Ventilation and perfusion MRI at a 0.35 T MR-Linac: feasibility and reproducibility study
por: Klaar, Rabea, et al.
Publicado: (2023)

QLog Solar-Cell Mode Photodiode Logarithmic CMOS Pixel Using Charge Compression and Readout †
por: Ni, Yang
Publicado: (2018)

Design and Performance of a Pinned Photodiode CMOS Image Sensor Using Reverse Substrate Bias †
por: Stefanov, Konstantin D., et al.
Publicado: (2018)

TCAD Device Simulations of Irradiated Silicon Detectors
por: Palomo Pinto, Francisco Rogelio, et al.
Publicado: (2020)

A 0.13$\mu$m CMOS technology: Its radiation hardness and its application in high energy physics experiments
por: Hänsler, Kurt
Publicado: (2004)

Quantitative MR thermometry based on phase-drift correction PRF shift method at 0.35 T
por: Chen, Yuping, et al.
Publicado: (2018)

A pilot study of short T2* measurements with ultrashort echo time imaging at 0.35 T
por: Chen, Xiuyuan, et al.
Publicado: (2018)

Cannot write session to /tmp/vufind_sessions/sess_ti5jgoqdvlkj7qk0hk3qlmjlec