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Low-power SEE hardening techniques and error rate evaluation in 65nm readout ASICs

Single event radiation effects represent one of the main challenges for digital designs exposed to ionizing particles in high energy physics detectors. Radiation hardening techniques are based on redundancy, leading to a significant increase in power consumption and area overhead. This contribution...

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Detalles Bibliográficos
Autores principales: Caratelli, Alessandro, Scarfi, Simone, Bergamin, Gianmario, Ceresa, Davide, Clerq, Jarne De, Kloukinas, Kostas, Leblebici, Yusuf
Lenguaje:eng
Publicado: SISSA 2020
Materias:
Acceso en línea:https://dx.doi.org/10.22323/1.370.0015
http://cds.cern.ch/record/2724952
_version_ 1780966020019650560
author Caratelli, Alessandro
Scarfi, Simone
Bergamin, Gianmario
Ceresa, Davide
Clerq, Jarne De
Kloukinas, Kostas
Leblebici, Yusuf
author_facet Caratelli, Alessandro
Scarfi, Simone
Bergamin, Gianmario
Ceresa, Davide
Clerq, Jarne De
Kloukinas, Kostas
Leblebici, Yusuf
author_sort Caratelli, Alessandro
collection CERN
description Single event radiation effects represent one of the main challenges for digital designs exposed to ionizing particles in high energy physics detectors. Radiation hardening techniques are based on redundancy, leading to a significant increase in power consumption and area overhead. This contribution will present the single event effects hardening techniques adopted in the pixel and strip readout ASICs of the PS modules for the CMS outer tracker upgrade in relation to power requirements and error rates. Cross section measurements on the silicon prototypes and expected error rates evaluated for the CMS tracker particle flux and spectrum will be presented.
id oai-inspirehep.net-1792903
institution Organización Europea para la Investigación Nuclear
language eng
publishDate 2020
publisher SISSA
record_format invenio
spelling oai-inspirehep.net-17929032020-07-25T21:15:59Zdoi:10.22323/1.370.0015http://cds.cern.ch/record/2724952engCaratelli, AlessandroScarfi, SimoneBergamin, GianmarioCeresa, DavideClerq, Jarne DeKloukinas, KostasLeblebici, YusufLow-power SEE hardening techniques and error rate evaluation in 65nm readout ASICsDetectors and Experimental TechniquesSingle event radiation effects represent one of the main challenges for digital designs exposed to ionizing particles in high energy physics detectors. Radiation hardening techniques are based on redundancy, leading to a significant increase in power consumption and area overhead. This contribution will present the single event effects hardening techniques adopted in the pixel and strip readout ASICs of the PS modules for the CMS outer tracker upgrade in relation to power requirements and error rates. Cross section measurements on the silicon prototypes and expected error rates evaluated for the CMS tracker particle flux and spectrum will be presented.SISSAoai:inspirehep.net:17929032020
spellingShingle Detectors and Experimental Techniques
Caratelli, Alessandro
Scarfi, Simone
Bergamin, Gianmario
Ceresa, Davide
Clerq, Jarne De
Kloukinas, Kostas
Leblebici, Yusuf
Low-power SEE hardening techniques and error rate evaluation in 65nm readout ASICs
title Low-power SEE hardening techniques and error rate evaluation in 65nm readout ASICs
title_full Low-power SEE hardening techniques and error rate evaluation in 65nm readout ASICs
title_fullStr Low-power SEE hardening techniques and error rate evaluation in 65nm readout ASICs
title_full_unstemmed Low-power SEE hardening techniques and error rate evaluation in 65nm readout ASICs
title_short Low-power SEE hardening techniques and error rate evaluation in 65nm readout ASICs
title_sort low-power see hardening techniques and error rate evaluation in 65nm readout asics
topic Detectors and Experimental Techniques
url https://dx.doi.org/10.22323/1.370.0015
http://cds.cern.ch/record/2724952
work_keys_str_mv AT caratellialessandro lowpowerseehardeningtechniquesanderrorrateevaluationin65nmreadoutasics
AT scarfisimone lowpowerseehardeningtechniquesanderrorrateevaluationin65nmreadoutasics
AT bergamingianmario lowpowerseehardeningtechniquesanderrorrateevaluationin65nmreadoutasics
AT ceresadavide lowpowerseehardeningtechniquesanderrorrateevaluationin65nmreadoutasics
AT clerqjarnede lowpowerseehardeningtechniquesanderrorrateevaluationin65nmreadoutasics
AT kloukinaskostas lowpowerseehardeningtechniquesanderrorrateevaluationin65nmreadoutasics
AT leblebiciyusuf lowpowerseehardeningtechniquesanderrorrateevaluationin65nmreadoutasics