Time resolution and power consumption of a monolithic silicon pixel prototype in SiGe BiCMOS technology

SiGe BiCMOS technology can be used to produce ultra-fast, low-power silicon pixel sensors that provide state-of-the-art time resolution even without internal gain. The development of such sensors requires the identification and control of the main factors that may degrade the timing performance as w...

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Detalles Bibliográficos
Autores principales: Paolozzi, L., Cardarelli, R., Débieux, S., Favre, Y., Ferrère, D., Gonzalez-Sevilla, S., Iacobucci, G., Kaynak, M., Martinelli, F., Nessi, M., Rücker, H., Sanna, I., Sultan, DMS, Valerio, P., Zaffaroni, E.
Lenguaje:eng
Publicado: 2020
Materias:
physics.ins-det
Detectors and Experimental Techniques
Acceso en línea:https://dx.doi.org/10.1088/1748-0221/15/11/P11025
http://cds.cern.ch/record/2744919

Internet

https://dx.doi.org/10.1088/1748-0221/15/11/P11025
http://cds.cern.ch/record/2744919

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