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High-energy proton irradiation effects on GaN hybrid-drain-embedded gate injection transistors
The characterization of commercial-grade power transistors upon high levels of particle irradiation is required to enable radiation tolerant LED power supplies for the new luminaires of CERN accelerator tunnels, which represent a harsh environment for semiconductor devices. This work describes the e...
| Autores principales: | , |
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| Lenguaje: | eng |
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2020
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| Acceso en línea: | https://dx.doi.org/10.1016/j.microrel.2020.113656 http://cds.cern.ch/record/2739398 |