Characterizing High-Energy Ion Beams With PIPS Detectors

The energy deposited by heavy-ion beams was measured using a passivated implanted planar silicon (PIPS) detector in different facilities. Ion beams at ultrahigh energy lead to the formation of a second, unexpected peak in the deposited energy spectrum at slightly higher energy, in addition to the ex...

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Detalles Bibliográficos
Autores principales: Bagatin, M, Ferlet-Cavrois, V, Gerardin, S, Muschitiello, M, Paccagnella, A, Costantino, A, Santin, G, Polo, C Boatella, Garcia Alía, R, Fernandez Martinez, P, Kastriotou, M
Lenguaje:eng
Publicado: 2019
Acceso en línea:https://dx.doi.org/10.1109/TNS.2019.2958746
http://cds.cern.ch/record/2730007

Internet

https://dx.doi.org/10.1109/TNS.2019.2958746
http://cds.cern.ch/record/2730007

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