Characterizing High-Energy Ion Beams With PIPS Detectors

The energy deposited by heavy-ion beams was measured using a passivated implanted planar silicon (PIPS) detector in different facilities. Ion beams at ultrahigh energy lead to the formation of a second, unexpected peak in the deposited energy spectrum at slightly higher energy, in addition to the ex...

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Autores principales: Bagatin, M, Ferlet-Cavrois, V, Gerardin, S, Muschitiello, M, Paccagnella, A, Costantino, A, Santin, G, Polo, C Boatella, Garcia Alía, R, Fernandez Martinez, P, Kastriotou, M
Lenguaje:eng
Publicado: 2019
Acceso en línea:https://dx.doi.org/10.1109/TNS.2019.2958746
http://cds.cern.ch/record/2730007
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author Bagatin, M
Ferlet-Cavrois, V
Gerardin, S
Muschitiello, M
Paccagnella, A
Costantino, A
Santin, G
Polo, C Boatella
Garcia Alía, R
Fernandez Martinez, P
Kastriotou, M
author_facet Bagatin, M
Ferlet-Cavrois, V
Gerardin, S
Muschitiello, M
Paccagnella, A
Costantino, A
Santin, G
Polo, C Boatella
Garcia Alía, R
Fernandez Martinez, P
Kastriotou, M
author_sort Bagatin, M
collection CERN
description The energy deposited by heavy-ion beams was measured using a passivated implanted planar silicon (PIPS) detector in different facilities. Ion beams at ultrahigh energy lead to the formation of a second, unexpected peak in the deposited energy spectrum at slightly higher energy, in addition to the expected primary peak. Monte Carlo simulations are used to shed light on the origin of this phenomenon and the underlying physical mechanisms. The importance of accounting for secondaries’ production in the packaging materials of the diode and the mechanisms at play are highlighted in the discussion of the results.
id oai-inspirehep.net-1808316
institution Organización Europea para la Investigación Nuclear
language eng
publishDate 2019
record_format invenio
spelling oai-inspirehep.net-18083162021-03-01T10:43:51Zdoi:10.1109/TNS.2019.2958746http://cds.cern.ch/record/2730007engBagatin, MFerlet-Cavrois, VGerardin, SMuschitiello, MPaccagnella, ACostantino, ASantin, GPolo, C BoatellaGarcia Alía, RFernandez Martinez, PKastriotou, MCharacterizing High-Energy Ion Beams With PIPS DetectorsThe energy deposited by heavy-ion beams was measured using a passivated implanted planar silicon (PIPS) detector in different facilities. Ion beams at ultrahigh energy lead to the formation of a second, unexpected peak in the deposited energy spectrum at slightly higher energy, in addition to the expected primary peak. Monte Carlo simulations are used to shed light on the origin of this phenomenon and the underlying physical mechanisms. The importance of accounting for secondaries’ production in the packaging materials of the diode and the mechanisms at play are highlighted in the discussion of the results.oai:inspirehep.net:18083162019
spellingShingle Bagatin, M
Ferlet-Cavrois, V
Gerardin, S
Muschitiello, M
Paccagnella, A
Costantino, A
Santin, G
Polo, C Boatella
Garcia Alía, R
Fernandez Martinez, P
Kastriotou, M
Characterizing High-Energy Ion Beams With PIPS Detectors
title Characterizing High-Energy Ion Beams With PIPS Detectors
title_full Characterizing High-Energy Ion Beams With PIPS Detectors
title_fullStr Characterizing High-Energy Ion Beams With PIPS Detectors
title_full_unstemmed Characterizing High-Energy Ion Beams With PIPS Detectors
title_short Characterizing High-Energy Ion Beams With PIPS Detectors
title_sort characterizing high-energy ion beams with pips detectors
url https://dx.doi.org/10.1109/TNS.2019.2958746
http://cds.cern.ch/record/2730007
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