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Characterizing High-Energy Ion Beams With PIPS Detectors
The energy deposited by heavy-ion beams was measured using a passivated implanted planar silicon (PIPS) detector in different facilities. Ion beams at ultrahigh energy lead to the formation of a second, unexpected peak in the deposited energy spectrum at slightly higher energy, in addition to the ex...
Autores principales: | Bagatin, M, Ferlet-Cavrois, V, Gerardin, S, Muschitiello, M, Paccagnella, A, Costantino, A, Santin, G, Polo, C Boatella, Garcia Alía, R, Fernandez Martinez, P, Kastriotou, M |
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Lenguaje: | eng |
Publicado: |
2019
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Acceso en línea: | https://dx.doi.org/10.1109/TNS.2019.2958746 http://cds.cern.ch/record/2730007 |
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