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Heavy-Ion Microbeam Studies of Single-Event Leakage Current Mechanism in SiC VD-MOSFETs
Heavy-ion microbeams are employed for probing the radiation-sensitive regions in commercial silicon carbide (SiC) vertical double-diffused power (VD)-MOSFETs with micrometer accuracy. By scanning the beam spot over the die, a spatial periodicity was observed in the leakage current degradation, refle...
| Autores principales: | , , , , , , , , |
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| Lenguaje: | eng |
| Publicado: |
2020
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| Materias: | |
| Acceso en línea: | https://dx.doi.org/10.1109/tns.2020.3002729 http://cds.cern.ch/record/2727539 |