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Heavy-Ion Microbeam Studies of Single-Event Leakage Current Mechanism in SiC VD-MOSFETs

Heavy-ion microbeams are employed for probing the radiation-sensitive regions in commercial silicon carbide (SiC) vertical double-diffused power (VD)-MOSFETs with micrometer accuracy. By scanning the beam spot over the die, a spatial periodicity was observed in the leakage current degradation, refle...

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Detalles Bibliográficos
Autores principales:	Martinella, C, Ziemann, T, Stark, R, Tsibizov, A, Voss, K O, Alia, R G, Kadi, Y, Grossner, U, Javanainen, A
Lenguaje:	eng
Publicado:	2020
Materias:	Nuclear Physics - Experiment
Acceso en línea:	https://dx.doi.org/10.1109/tns.2020.3002729 http://cds.cern.ch/record/2727539

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