Electron, Neutron, and Proton Irradiation Effects on SiC Radiation Detectors

Owing to their low dark current, high transparency, high thermal conductivity, and potential radiation hardness, there is a special interest in silicon carbide (SiC) devices for radiation monitoring in radiation harsh environments and with elevated temperatures and, especially, for the plasma diagno...

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Detalles Bibliográficos
Autores principales: Rafí, Joan Marc, Pellegrini, Giulio, Godignon, Philippe, Ugobono, Sofía Otero, Rius, Gemma, Tsunoda, Isao, Yoneoka, Masashi, Takakura, Kenichiro, Kramberger, Gregor, Moll, Michael
Lenguaje:eng
Publicado: 2020
Acceso en línea:https://dx.doi.org/10.1109/TNS.2020.3029730
http://cds.cern.ch/record/2750411

Internet

https://dx.doi.org/10.1109/TNS.2020.3029730
http://cds.cern.ch/record/2750411

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