Impact of Terrestrial Neutrons on the Reliability of SiC VD-MOSFET Technologies

Accelerated terrestrial neutron irradiations were performed on different commercial SiC power MOSFETs with planar, trench, and double-trench architectures. The results were used to calculate the failure cross sections and the failure-in-time (FIT) rates at sea level. Enhanced gate and drain leakage...

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Detalles Bibliográficos
Autores principales: Martinella, C, Alia, R G, Stark, R, Coronetti, A, Cazzaniga, C, Kastriotou, M, Kadi, Y, Gaillard, R, Grossner, U, Javanainen, A
Lenguaje:eng
Publicado: 2021
Materias:
Other
Acceso en línea:https://dx.doi.org/10.1109/tns.2021.3065122
http://cds.cern.ch/record/2772980

Internet

https://dx.doi.org/10.1109/tns.2021.3065122
http://cds.cern.ch/record/2772980

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